Semiconductor device and method for manufacturing the same
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United States of America Patent
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Mar 3, 2015
Grant Date -
Sep 25, 2014
app pub date -
Sep 11, 2013
filing date -
Mar 22, 2013
priority date (Note) -
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Abstract
According to one embodiment, a semiconductor memory device includes a first semiconductor layer, a second semiconductor layer, a first electrode, and a second electrode. The first semiconductor layer is a first conductivity type. The second semiconductor layer is provided in a surface region of the first semiconductor layer and is the first conductivity type. The first electrode is provided inside a first trench extending in the first direction and opened to a surface of the second semiconductor layer. The second electrode is provided in a second trench extending in a second direction crossing the first direction and opened to the surface of the second semiconductor layer. A dimension from the surface of the second semiconductor layer to a lower end of the second electrode is shorter than a dimension from the surface of the second semiconductor layer to a lower end of the first electrode.
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