Method for forming a buried p-n junction and articles formed thereby

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United States of America Patent

PATENT NO 8969117
SERIAL NO

13801560

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Abstract

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Methods for forming a buried p-n junction and avalanche photodiodes incorporating same are disclosed. The method includes forming a well in a semiconductor layer, wherein a depth of the well is selected as a function of the desired shape of the p-n junction in the edge region of the avalanche photodiode. A diffusion mask is then formed on the semiconductor layer, wherein the diffusion mask includes at least two openings per APD formed, wherein one opening is a diffusion window and the other is a diffusion sink. The depth of the p-n junction in the active region of the APD is based, in part, on an attribute of the diffusion mask relating to the diffusion sink.

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Patent Owner(s)

Patent OwnerAddress
LG INNOTEK CO LTD30 MAGOKJUNGANG 10-RO GANGSEO-GU SEOUL 07796 07796

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Itzler, Mark Allen Princeton, US 31 547

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