Self-aligned contacts

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United States of America Patent

PATENT NO 8969187
APP PUB NO 20130230978A1
SERIAL NO

13859284

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Abstract

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A method of forming a gate structure with a self-aligned contact is provided and includes sequentially depositing a sacrificial layer and a secondary layer onto poly-Si disposed at a location of the gate structure, encapsulating the sacrificial layer, the secondary layer and the poly-Si, removing the sacrificial layer through openings formed in the secondary layer and forming silicide within at least the space formally occupied by the sacrificial layer.

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Patent Owner(s)

  • GLOBALFOUNDRIES INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Guo, Dechao Wappingers Falls, US 268 2401
Haensch, Wilfried E A Somers, US 6 32
Han, Shu-Jen Wappingers Falls, US 225 1502
Lin, Chung-Hsun White Plains, US 169 2366

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