Etching method, etching apparatus and storage medium

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United States of America Patent

PATENT NO 8969218
APP PUB NO 20120264308A1
SERIAL NO

13443156

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Abstract

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Disclosed is a technique for attaining high etching selectivity of a silicon nitride film to a silicon oxide film. The etching method includes a step of supplying a silylating agent to a substrate having a silicon nitride film and a silicon oxide film exposed on the surface thereof to thereby form a silylated film as a protective film over the surface of the silicon oxide film. After this step, an etching solution is supplied to the substrate. It is thus possible to selectively etch only the silicon nitride film.

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Patent Owner(s)

  • TOKYO ELECTRON LIMITED

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Egashira, Keisuke Nirasaki, JP 24 54
Kaneko, Miyako Nirasaki, JP 20 172
Orii, Takehiko Nirasaki, JP 82 1138
Watanabe, Tsukasa Nirasaki, JP 57 470

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