Method of manufacturing photoelectric conversion device
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United States of America Patent
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Mar 3, 2015
Grant Date -
May 24, 2012
app pub date -
Jan 27, 2012
filing date -
Dec 24, 2008
priority date (Note) -
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Abstract
Disclosed herein is a photoelectric conversion device having a semiconductor substrate including a front side and back side, a protective layer formed on the front side of the semiconductor substrate, a first non-single crystalline semiconductor layer formed on the back side of the semiconductor substrate, a first conductive layer including a first impurity formed on a first portion of a back side of the first non-single crystalline semiconductor layer, and a second conductive layer including the first impurity and a second impurity formed on a second portion of the back side of the first non-single crystalline semiconductor layer.
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