Memory cells having storage elements that share material layers with steering elements and methods of forming the same
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United States of America Patent
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Mar 3, 2015
Grant Date -
Sep 25, 2014
app pub date -
Jun 9, 2014
filing date -
Oct 14, 2010
priority date (Note) -
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Abstract
A memory cell is provided that includes a steering element, a metal-insulator-metal stack coupled in series with the steering element, and a conductor above the metal-insulator-metal stack. The steering element includes a diode having an n-region and a p-region. The metal-insulator-metal stack includes a reversible resistivity-switching material between a top electrode and a bottom electrode, and the top electrode includes a highly doped semiconductor material. The memory cell does not include a metal layer disposed between the metal-insulator-metal stack and the conductor. The bottom electrode includes the n-region or the p-region of the diode, and the reversible resistivity-switching material is directly adjacent the n-region or the p-region of the diode. Numerous other aspects are provided.
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