Nitride semiconductor device, nitride semiconductor wafer and method for manufacturing nitride semiconductor layer
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Mar 3, 2015
Grant Date -
Aug 21, 2014
app pub date -
Apr 28, 2014
filing date -
May 16, 2011
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
According to one embodiment, a nitride semiconductor device includes a foundation layer and a functional layer. The foundation layer is formed on an Al-containing nitride semiconductor layer formed on a silicon substrate. The foundation layer has a thickness not less than 1 micrometer and including GaN. The functional layer is provided on the foundation layer. The functional layer includes a first semiconductor layer. The first semiconductor layer has an impurity concentration higher than an impurity concentration in the foundation layer and includes GaN of a first conductivity type.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully