Semiconductor device and method for manufacturing same
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United States of America Patent
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Mar 3, 2015
Grant Date -
Oct 3, 2013
app pub date -
Mar 7, 2013
filing date -
Mar 28, 2012
priority date (Note) -
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Abstract
According to an embodiment, a semiconductor device includes a first layer including a first nitride semiconductor, a second layer provided on the first layer and including a second nitride semiconductor having a wider bandgap than the first nitride semiconductor. The device also includes a source electrode and a drain electrode provided on the second layer; and a gate electrode provided on the second layer and located between the source electrode and the drain electrode. The second layer includes a first region between the gate electrode and the drain electrode, the first region being selectively provided in a surface of the second layer and contains fluorine. A concentration of fluorine in the first region is higher than a concentration of fluorine in a portion underneath the gate electrode in the second layer.
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