Semiconductor devices with dielectric layers

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United States of America Patent

PATENT NO 8970014
APP PUB NO 20140001606A1
SERIAL NO

14020021

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Abstract

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Semiconductor devices and methods of forming the semiconductor device are provided, the semiconductor devices including a first dielectric layer on a substrate, and a second dielectric layer on the first dielectric layer. The first dielectric layer has a carbon concentration lower than the second dielectric layer.

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Patent Owner(s)

  • SAMSUNG ELECTRONICS CO., LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Choi, Yun-Ki Yongin-si, KR 14 56
Jung, Hyung-Suk Seoul, KR 49 697
Lim, Ha-jin Seoul, KR 37 536

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