NAND flash memory programming

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United States of America Patent

PATENT NO 8971127
APP PUB NO 20140022847A1
SERIAL NO

14034266

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Abstract

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A method of charging a floating gate in a nonvolatile memory cell comprises bringing a substrate channel within the memory cell to a first voltage, bringing a control gate to a programming voltage, and floating the substrate channel voltage while the control gate is at the programming voltage. Memory devices include state machines or controllers operable to perform the described method, and operation of such a state machine, memory device, and information handling system are described.

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Patent Owner(s)

  • MICRON TECHNOLOGY, INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Ghodsi, Ramin San Jose, US 76 592
Tang, Qiang Fremont, US 188 770

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