Data refresh in non-volatile memory
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United States of America Patent
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Mar 3, 2015
Grant Date -
May 22, 2014
app pub date -
Nov 19, 2012
filing date -
Nov 19, 2012
priority date (Note) -
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Abstract
A method of reducing read errors in a non-volatile memory device that result from bit-line or word-line disturb conditions generated by erase operations includes selecting a subset of a memory array for refresh after each erase operation. A pointer to the refresh target section is updated as part of the method to direct the refresh operation to the appropriate subset of the memory array. Refresh may be performed subsequent to an erase operation or concurrently therewith. By distributing the time consumed by refresh operations over many erase operations so the relative refresh time for any one erase becomes small.
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