Efficient post write read in three dimensional nonvolatile memory

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United States of America Patent

PATENT NO 8972675
APP PUB NO 20150006790A1
SERIAL NO

14280282

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Abstract

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Data that is stored in a higher error rate format in a 3-D nonvolatile memory is backed up in a lower error rate format. Later, the higher error rate copy is sampled to determine if it is acceptable. A sampling pattern samples all word lines of a string and at least one word line of each string of the block.

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Patent Owner(s)

  • SANDISK TECHNOLOGIES LLC

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Avila, Chris Saratoga, US 66 1459
Chen, Jian Menlo Park, US 1536 22455
Dusija, Gautam A Milpitas, US 15 125

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