Forming charge trap separation in a flash memory semiconductor device
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United States of America Patent
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Mar 10, 2015
Grant Date -
May 29, 2014
app pub date -
Nov 26, 2012
filing date -
Nov 26, 2012
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Abstract
During formation of a charge trap separation in a semiconductor device, a polymer deposition is formed in a reactor using a first chemistry. In a following step, a second chemistry can be used to etch the polymer deposition in the reactor. The same or similar second chemistry can be used in a second etching step to expose a first oxide layer in each of the cells of the semiconductor device and to form a flat upper surface. This additional etch step can also be performed by the reactor, thereby reducing the number of machines required in the formation process.
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