Nonvolatile variable resistance device having a semiconductor layer with higher percentage of unterminated semiconductor element than adjacent layers

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United States of America Patent

PATENT NO 8975611
APP PUB NO 20140191184A1
SERIAL NO

14209169

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Abstract

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According to one embodiment, a nonvolatile variable resistance device includes a first electrode, a second electrode, a first layer, and a second layer. The second electrode includes a metal element. The first layer is arranged between the first electrode and the second electrode and includes a semiconductor element. The second layer is inserted between the second electrode and the first layer and includes the semiconductor element. The percentage of the semiconductor element being unterminated is higher in the second layer than in the first layer.

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Patent Owner(s)

  • TOSHIBA MEMORY CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Fujii, Shosuke Kanagawa, JP 67 931
Ichihara, Reika Kanagawa, JP 75 745
Yamauchi, Takashi Kanagawa, JP 122 955

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