Flexible semiconductor device
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United States of America Patent
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Mar 10, 2015
Grant Date -
Feb 24, 2011
app pub date -
Nov 13, 2009
filing date -
Nov 18, 2008
priority date (Note) -
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status (Latency Note)
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Abstract
There is provided a flexible semiconductor device. The flexible semiconductor device of the present invention comprises a metal layer comprising a gate electrode, a source electrode and a drain electrode; a metal oxide film made from a metal which constitutes the metal layer and formed over a surface region of the metal layer; and a semiconductor layer formed above the gate electrode via the metal oxide film. In the flexible semiconductor device, uncovered portions, each of which is not covered with the metal oxide film, are locally formed in the surface region of the metal layer; and also electrical connections are formed between the source electrode and the semiconductor layer and between the drain electrode and the semiconductor layer via the uncovered portions.
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