Locally isolated protected bulk FinFET semiconductor device
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United States of America Patent
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Mar 10, 2015
Grant Date -
May 29, 2014
app pub date -
Jan 28, 2014
filing date -
Nov 27, 2012
priority date (Note) -
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Abstract
A semiconductor device includes a bulk substrate having a plurality of trenches formed therein. The trenches define a plurality of semiconductor fins that are integral with the bulk semiconductor substrate. A local dielectric material is disposed in each trench and between each pair of semiconductor fins among the plurality of semiconductor fins. The semiconductor device further includes an etch resistant layer formed on the local dielectric material.
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