Semiconductor device and method of fabricating the same

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 8975692
APP PUB NO 20140091388A1
SERIAL NO

14100780

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Abstract

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Provided are a semiconductor device and a method of fabricating the same. The method includes: forming a trench in a semiconductor substrate of a first conductive type; forming a trench dopant containing layer including a dopant of a second conductive type on a sidewall and a bottom surface of the trench; forming a doping region by diffusing the dopant in the trench dopant containing layer into the semiconductor substrate; and removing the trench dopant containing layer.

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Patent Owner(s)

  • ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kim, Jongdae Daejeon, KR 66 412
Kim, Sang Gi Daejeon, KR 41 421
Koo, Jin-Gun Daejeon, KR 8 44
Lee, Jin Ho Daejeon, KR 773 5435
Na, Kyoung Il Busan, KR 6 21
Park, Jong-Moon Daejeon, KR 9 86
Yang, Yil Suk Daejeon, KR 77 660
Yoo, Seong Wook Daegu, KR 9 87

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