Capacitive pressure sensor and method of manufacturing the same
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United States of America Patent
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Mar 10, 2015
Grant Date -
Aug 1, 2013
app pub date -
Feb 1, 2013
filing date -
Feb 1, 2012
priority date (Note) -
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Abstract
A capacitive pressure sensor includes: a semiconductor substrate having a reference pressure chamber formed therein; a diaphragm which is formed in a front surface of the semiconductor substrate and has a ring-like peripheral through hole penetrating between the front surface of the semiconductor substrate and the reference pressure chamber and defining an upper electrode and a plurality of central through holes; a peripheral insulating layer which fills the peripheral through hole and electrically isolates the upper electrode from other portions of the semiconductor substrate; and a central insulating layer which fills the central through holes.
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