Electrically rewriteable nonvolatile semiconductor memory device
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United States of America Patent
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Mar 10, 2015
Grant Date -
Aug 16, 2012
app pub date -
Sep 7, 2011
filing date -
Feb 15, 2011
priority date (Note) -
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Abstract
A control circuit executes an erase operation that includes an erase pulse application operation and an erase verify operation. The erase pulse application operation applies an erase pulse voltage to a memory cell to change the memory cell from a write state to an erase state. The erase verify operation applies an erase verify voltage to the memory cell to judge whether the memory cell is in the erase state or not. The control circuit changes conditions of execution of the erase verify operation when the number of times of executions of the erase pulse application operation in one erase operation reaches a first number.
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