Method for fabricating stacked nitride-compound semiconductor structure and method for fabricating nitride-compound semiconductor light emitting device
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United States of America Patent
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Mar 17, 2015
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Mar 14, 2013
app pub date -
Mar 9, 2012
filing date -
Sep 14, 2011
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Abstract
According to one embodiment, a method for fabricating a stacked nitride-compound semiconductor structure includes forming a first protection film on a second surface of a substrate, forming a first nitride-compound semiconductor layer on the first surface of the substrate, forming a second protection film on the first nitride-compound semiconductor layer, removing the first protection film to expose the second surface of the substrate, forming a second nitride-compound semiconductor layer on the second surface of the substrate, and removing the second protection film to expose the first surface of the second nitride-compound semiconductor layer.
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