Substrate dicing by laser ablation and plasma etch damage removal for ultra-thin wafers
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United States of America Patent
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Mar 17, 2015
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app pub date -
Jan 17, 2014
filing date -
Jan 25, 2013
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Abstract
Methods of dicing substrates having a plurality of ICs. A method includes forming a mask, patterning the mask with a femtosecond laser scribing process to provide a patterned mask with gaps, and ablating through an entire thickness of a semiconductor substrate to singulate the IC. Following laser-based singulation, a plasma etch is performed to remove a layer of semiconductor sidewall damaged by the laser scribe process. In the exemplary embodiment, a femtosecond laser is utilized and a 1-3 μm thick damage layer is removed with the plasma etch. Following the plasma etch, the mask is removed, rendering the singulated die suitable for assembly/packaging.
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