Methods of forming contact regions using sacrificial layers
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United States of America Patent
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Mar 17, 2015
Grant Date -
Nov 28, 2013
app pub date -
Mar 15, 2013
filing date -
May 24, 2012
priority date (Note) -
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Abstract
Methods of patterning semiconductor contact materials on a crystalline semiconductor material which allow high-quality interfaces between the crystalline semiconductor material and the patterned semiconductor contact material are provided. Blanket layers of passivation material and sacrificial material are formed on the crystalline semiconductor material. A first contact opening is formed into the blanker layer of sacrificial material. The first contact opening is extended into blanket layer of passivation material, stopping on a first surface portion of the crystalline semiconductor material, using remaining sacrificial material portions as an etch mask. A semiconductor contact material is formed on the exposed first surface portion of the crystalline semiconductor material. In some embodiments, an electrode material portion can be formed over the first contact opening, and then a second blanket layer of sacrificial material can be formed, followed by forming a next contact opening.
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