Method for manufacturing semiconductor device

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 8980762
APP PUB NO 20140065833A1
SERIAL NO

13728390

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Abstract

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According to one embodiment, a method for manufacturing a semiconductor device includes forming a film having different filling properties dependent on space width above the patterning film to cover the first line patterns and the second line patterns to form the film on the first line patterns and on the first inter-line pattern space while making a cavity in the first inter-line pattern space and to form the film on at least a bottom portion of the second inter-line pattern space and a side wall of each of the second line patterns. The method includes performing etch-back of the film to remove the film on the first line patterns and on the first inter-line pattern space while causing the film to remain on at least the side wall of the second line patterns.

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Patent Owner(s)

  • KABUSHIKI KAISHA TOSHIBA

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Iida, Kazunori Mie-Ken, JP 16 21
Kobayashi, Yuji Mie-ken, JP 260 2319

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