Nonvolatile semiconductor memory device and method of manufacturing the same
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United States of America Patent
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Mar 17, 2015
Grant Date -
Jan 17, 2013
app pub date -
Sep 19, 2012
filing date -
Mar 19, 2010
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Abstract
According to one embodiment, a nonvolatile semiconductor memory device includes a fin-type stacked layer structure in which a first insulating layer, a first semiconductor layer, . . . an n-th insulating layer, an n-th semiconductor layer, and an (n+1)-th insulating layer (n is a natural number equal to or more than 2) are stacked in order thereof in a first direction perpendicular to a surface of a semiconductor substrate and which extends in a second direction parallel to the surface of the semiconductor substrate, first to n-th memory strings which use the first to n-th semiconductor layers as channels respectively, a common semiconductor layer which combines the first to n-th semiconductor layers at first ends of the first to n-th memory strings in the second direction.
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