Nonvolatile semiconductor memory device

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United States of America Patent

PATENT NO 8982623
APP PUB NO 20130329494A1
SERIAL NO

13783374

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Abstract

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A non-volatile semiconductor memory device has memory cell arrays, with the memory cells arranged in a matrix configuration and divided into p areas in the column direction, a column redundancy area arranged in a portion of the memory cell array and having redundancy columns that can substitute for defective user data columns, and a column substituting register that holds the column substituting information for substituting the defective user data columns of the selected area with the redundancy columns.

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Patent Owner(s)

  • TOSHIBA MEMORY CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Shirakawa, Masanobu Kanagawa, JP 261 1665

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