Structure and method for thermal treatment with epitaxial SiCP thermal stability improvement
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United States of America Patent
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Mar 24, 2015
Grant Date -
Jun 20, 2013
app pub date -
Dec 20, 2011
filing date -
Dec 20, 2011
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Abstract
The present disclosure provides a method for making an integrated circuit in one embodiment. The method includes providing a semiconductor substrate having an active region and a first gate stack disposed on the semiconductor substrate in the active region; forming in-situ phosphorous-doped silicon carbide (SiCP) features on the semiconductor substrate and disposed on sides of the first gate stack; replacing the first gate stack with a second gate stack having a high k dielectric material layer; and thereafter performing a millisecond annealing (MSA) process with a thermal profile having a first thermal wavelet and a second thermal wavelet.
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