Methods of forming semiconductor structures including bodies of semiconductor material

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United States of America Patent

PATENT NO 8987108
APP PUB NO 20140206175A1
SERIAL NO

14176780

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Abstract

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Semiconductor structures that include bodies of a semiconductor material spaced apart from an underlying substrate. The bodies may be physically separated from the substrate by at least one of a dielectric material, an open volume and a conductive material. The bodies may be electrically coupled by one or more conductive structures, which may be used as an interconnect structure to electrically couple components of memory devices. By providing isolation between the bodies, the semiconductor structure provides the properties of a conventional SOI substrate (e.g., high speed, low power, increased device density and isolation) while substantially reducing fabrication acts and costs associated with such SOI substrates. Additionally, the semiconductor structures of the present disclosure provide reduced parasitic coupling and current leakage due to the isolation of the bodies by the intervening dielectric material.

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Patent Owner(s)

  • MICRON TECHNOLOGY, INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Allen, Tuman E Kuna, US 10 124
Tang, Sanh D Boise, US 280 4010
Wells, David H Boise, US 152 3293

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