Polycrystalline group III metal nitride with getter and method of making

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United States of America Patent

PATENT NO 8987156
APP PUB NO 20130251615A1
SERIAL NO

13894220

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Abstract

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A gettered polycrystalline group III metal nitride is formed by heating a group III metal with an added getter in a nitrogen-containing gas. Most of the residual oxygen in the gettered polycrystalline nitride is chemically bound by the getter. The gettered polycrystalline group III metal nitride is useful as a raw material for ammonothermal growth of bulk group III nitride crystals.

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Patent Owner(s)

  • SLT TECHNOLOGIES, INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
D'Evelyn, Mark P Santa Barbara, US 106 5446
Kamber, Derrick S Goleta, US 31 640

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