Semiconductor device having diode-built-in IGBT and semiconductor device having diode-built-in DMOS
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United States of America Patent
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Mar 24, 2015
Grant Date -
Dec 19, 2013
app pub date -
Apr 24, 2013
filing date -
Sep 5, 2007
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Abstract
A semiconductor device includes: a semiconductor substrate; a diode-built-in insulated-gate bipolar transistor having an insulated-gate bipolar transistor and a diode, which are disposed in the substrate, wherein the insulated-gate bipolar transistor includes a gate, and is driven with a driving signal input into the gate; and a feedback unit for detecting current passing through the diode. The driving signal is input from an external unit into the feedback unit. The feedback unit passes the driving signal to the gate of the insulated-gate bipolar transistor when the feedback unit detects no current through the diode, and the feedback unit stops passing the driving signal to the gate of the insulated-gate bipolar transistor when the feedback unit detects the current through the diode.
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