Radio frequency devices with enhanced ground structure
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United States of America Patent
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Mar 24, 2015
Grant Date -
May 28, 2009
app pub date -
May 17, 2007
filing date -
May 24, 2006
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Abstract
Tunable radio frequency (RF) devices, such as phase shifters and filters, are formed by depositing thin film layers on a substrate and patterning the thin film layers by various lithography techniques. A thin film metal layer is patterned to form a plurality of capacitors and inductors, leaving at least two grounding regions that lie closely adjacent the capacitors and inductors. As patterned portions of the grounding regions are electrically isolated from each other. Performance of the devices are improved by electrically bridging the differential potential grounding regions.
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