Method of manufacturing a body-contacted SOI FINFET
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United States of America Patent
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Mar 31, 2015
Grant Date -
Feb 20, 2014
app pub date -
Aug 16, 2012
filing date -
Aug 16, 2012
priority date (Note) -
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Abstract
A semiconductor structure including a body-contacted finFET device and methods form manufacturing the same. The method may include forming one or more semiconductor fins on a SOI substrate, forming a semiconductive body contact region connected to the bottom of the fin(s) in the buried insulator region, forming a sacrificial gate structure over the body region of the fin(s), forming a source region on one end of the fin(s), forming a drain region on the opposite end of the fin(s), replacing the sacrificial gate structure with a metal gate, and forming electrical contacts to the source, drain, metal gate, and body contact region. The method may further include forming a body contact fin contemporaneously with the finFET fins that is in contact with the body contact region, through which electrical contact to the body contact region is made.
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