Semiconductor device manufacturing method
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United States of America Patent
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Mar 31, 2015
Grant Date -
Mar 8, 2012
app pub date -
Mar 22, 2011
filing date -
Sep 8, 2010
priority date (Note) -
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Abstract
According to one embodiment, a semiconductor device manufacturing method comprises defining a region in which absorptance of light illuminated for annealing to a substrate on which a pattern of a semiconductor integrated circuit is formed is not larger than a preset value as a coarse pattern region, locally forming a thin film that enhances light absorptance on the coarse pattern region, and annealing the substrate by illuminating light onto the substrate on which the pattern of the integrated circuit and thin film are formed.
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