Coarse and fine programming in a solid state memory

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United States of America Patent

PATENT NO 8995182
APP PUB NO 20130201759A1
SERIAL NO

13796602

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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Memory devices adapted to receive and transmit analog data signals representative of bit patterns of two or more bits facilitate increases in data transfer rates relative to devices communicating data signals indicative of individual bits. Programming of such memory devices includes initially programming a cell with a coarse programming pulse to move its threshold voltage in a large step close to the programmed state. The neighboring cells are then programmed using coarse programming. The algorithm then returns to the initially programmed cells that are then programmed with one or more fine pulses that slowly move the threshold voltage in smaller steps to the final programmed state threshold voltage.

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Patent Owner(s)

  • MICRON TECHNOLOGY, INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hoei, Jung-Sheng Fremont, US 52 858
Roohparvar, Frankie F Monte Sereno, US 438 8004
Sarin, Vishal Saratoga, US 182 2194

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