Nonvolatile semiconductor memory

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 8995214
APP PUB NO 20140173182A1
SERIAL NO

13831520

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Abstract

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According to one embodiment, a memory includes a temporary storage area which temporary stores data in a read/write operation to an array. The temporary storage area comprises a clamp FET connected between a first data bus and a second data bus, a first precharge FET connected between the first data bus and first potential, a second precharge FET connected between the second data bus and the first potential, a first storage area connected to the first data bus, and a second storage area connected to the second data bus. The control circuit is configured to generate a precharge state in which the first data bus is precharged to the first potential and the second data bus is precharged to a second potential lower than the first potential, when the data is transferred from the second storage area to the first storage area.

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Patent Owner(s)

  • TOSHIBA MEMORY CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Komai, Hiromitsu Kamakura, JP 16 54

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