High energy semiconductor laser
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United States of America Patent
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Mar 31, 2015
Grant Date -
Mar 12, 2015
app pub date -
Nov 3, 2010
filing date -
Nov 3, 2010
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Abstract
A high energy semiconductor laser capable of high optical efficiency includes a master oscillator coupled to a plurality of slave oscillators, each producing a laser beam that is substantially at the same wavelength as the output beam from the master oscillator. The outputs of the slave oscillators are then coherently combined to a single monochromatic beam having an optical power which is substantially greater than that of beam output from the master oscillator. The slave oscillators can be configured as ring resonators. A suitable ring oscillator can be built by arranging one or more semiconductor diode laser gain media, two or more reflecting mirrors, and at least one semireflective mirror in a ring configuration. A suitable ring oscillator can also be built by machining a solid block to include one or more semiconductor diode laser high gain regions.
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