Pattern forming method, chemical amplification resist composition and resist film
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United States of America Patent
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Apr 7, 2015
Grant Date -
May 9, 2013
app pub date -
Dec 28, 2012
filing date -
Jun 28, 2010
priority date (Note) -
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Abstract
A pattern forming method, includes: (i) forming a film from a chemical amplification resist composition that contains (A) a resin capable of increasing a polarity of the resin (A) to decrease a solubility of the resin (A) for a developer containing an organic solvent by an action of an acid, (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation, and (C) a solvent; (ii) exposing the film; and (iii) performing development by using a developer containing an organic solvent, wherein the resin (A) has a structure in which a polar group is protected with a leaving group capable of decomposing and leaving by an action of an acid, and the leaving group contains a fluorine atom.
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