Avalanche photodiodes and methods of fabricating the same

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United States of America Patent

PATENT NO 8999744
APP PUB NO 20140206130A1
SERIAL NO

14220431

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Abstract

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Provided are an avalanche photodiode and a method of fabricating the same. The method of fabricating the avalanche photodiode includes sequentially forming a compound semiconductor absorption layer, a compound semiconductor grading layer, a charge sheet layer, a compound semiconductor amplification layer, a selective wet etch layer, and a p-type conductive layer on an n-type substrate through a metal organic chemical vapor deposition process.

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Patent Owner(s)

  • ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kwon, O-Kyun Daejeon, KR 54 348
Park, Mi-Ran Daejeon, KR 19 291

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