Asymmetrical replacement metal gate field effect transistor
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United States of America Patent
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Apr 7, 2015
Grant Date -
Jan 22, 2015
app pub date -
Aug 12, 2013
filing date -
Jul 18, 2013
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Abstract
An asymmetrical field effect transistor (FET) device includes a semiconductor substrate, a buried oxide layer disposed on the semiconductor substrate, an extended source region disposed on the buried oxide layer and a drain region disposed on the buried oxide layer. The asymmetrical FET device also includes a silicon on insulator region disposed between the extended source region and the drain region and a gate region disposed above the extended source region and the silicon on insulator region.
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