Reverse-conducting semiconductor device
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United States of America Patent
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Apr 7, 2015
Grant Date -
Sep 5, 2013
app pub date -
Apr 11, 2013
filing date -
Dec 19, 2007
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Abstract
A reverse-conducting semiconductor device (RC-IGBT) including a freewheeling diode and an insulated gate bipolar transistor (IGBT), and a method for making the RC-IGBT are provided. A first layer of a first conductivity type is created on a collector side before a second layer of a second conductivity type is created on the collector side. An electrical contact in direct electrical contact with the first and second layers is created on the collector side. A shadow mask is applied on the collector side, and a third layer of the first conductivity type is created through the shadow mask. At least one electrically conductive island, which is part of a second electrical contact in the finalized RC-IGBT, is created through the shadow mask. The island is used as a mask for creating the second layer, and those parts of the third layer which are covered by the island form the second layer.
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- 15 United States
- 10 France
- 8 Japan
- 7 China
- 5 Korea
- 2 Other
Patent Owner(s)
- ABB SCHWEIZ AG;ABB TECHNOLOGY AG
International Classification(s)
Inventor(s)
Inventor Name | Address | # of filed Patents | Total Citations |
---|---|---|---|
Faggiano, Eustachio | Wohlen, CH | 2 | 9 |
Janisch, Wolfgang | Unterkulm, CH | 7 | 30 |
Rahimo, Munaf | Uezwil, CH | 76 | 223 |
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