Precision polysilicon resistors
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Apr 7, 2015
Grant Date -
Jun 26, 2014
app pub date -
Dec 21, 2012
filing date -
Dec 21, 2012
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
Use of a replacement metal gate (RMG) process provides an opportunity to create precision polysilicon resistors alongside metal gate transistors. During formation of a sacrificial polysilicon gate, the precision polysilicon resistor can also be formed from the same polysilicon film. The polysilicon resistor can be slightly recessed so that a protective insulating layer can cover the resistor during subsequent replacement of the sacrificial gate with a metal gate. The final structure of the precision polysilicon resistor fabricated using such a process is more compact and less complex than existing structures that provide metal resistors for integrated circuits having metal gate transistors. Furthermore, the precision polysilicon resistor can be freely tuned to have a desired sheet resistance by either implanting the polysilicon film with dopants, adjusting the polysilicon film thickness, or both.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully