Semiconductor device having stacked substrates with protruding and recessed electrode connection

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United States of America Patent

PATENT NO 9000575
APP PUB NO 20120217650A1
SERIAL NO

13403338

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Abstract

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A first substrate with a penetration electrode formed thereon is stacked on a second substrate with a protruding electrode formed thereon. The penetration electrode has a recessed portion. The substrates are stacked with the protruding electrode entered in the recessed portion. A distal width of the protruding electrode is smaller than an opening width of the recessed portion.

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Patent Owner(s)

  • SEIKO EPSON CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Imai, Hideo Shimosuwa, JP 36 176

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