Method for manufacturing semiconductor light emitting device and semiconductor light emitting device wafer
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United States of America Patent
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Apr 14, 2015
Grant Date -
Dec 20, 2012
app pub date -
Feb 27, 2012
filing date -
Jun 17, 2011
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Abstract
According to one embodiment, a method is disclosed for manufacturing a semiconductor light emitting device. The method can include forming a nitride semiconductor layer including a light emitting layer on a first substrate having an unevenness, bonding the nitride layer to a second substrate, and separating the first substrate from the nitride layer by irradiating the nitride layer with light. The forming the nitride layer includes leaving a cavity in a space inside a depression of the unevenness while forming a thin film on the depression. The film includes a same material as part of the nitride layer. The separating includes causing the film to absorb part of the light so that intensity of the light applied to a portion of the nitride layer facing the depression is made lower than intensity of the light applied to a portion facing a protrusion of the unevenness.
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