Method for forming semiconductor gate structure and semiconductor gate structure
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United States of America Patent
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Apr 14, 2015
Grant Date -
Oct 2, 2014
app pub date -
Jun 14, 2013
filing date -
Apr 1, 2013
priority date (Note) -
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Abstract
A method for forming a semiconductor gate structure and a semiconductor gate structure are provided. The method includes: providing a substrate with a Ge layer as a surface thereof; forming a Sn layer on the Ge layer, in which an interface between the Ge layer and the Sn layer is a GeSn layer; removing the Sn layer to expose the GeSn layer; forming a GeSnOx passivation layer by performing an oxidation treatment for the GeSn layer, or forming a GeSnN or GeSnON passivation layer by performing a passivation treatment for the GeSn layer; and forming a gate stack on the GeSnOx , GeSnN or GeSnON passivation layer.
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