Resistance-switching memory cells adapted for use at low voltage

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United States of America Patent

PATENT NO 9006795
APP PUB NO 20140158974A1
SERIAL NO

14180818

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Abstract

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A memory cell is provided that includes a diode and a resistance-switching material layer coupled in series with the diode. The resistance-switching material layer has a thickness between 20 and 65 angstroms. Other aspects are also provided.

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Patent Owner(s)

  • SANDISK TECHNOLOGIES LLC

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Li, Feng San Jose, US 746 4546
Meeks, Albert T Sunnyvale, US 7 81
Scheuerlein, Roy E Cupertino, US 251 12028
Yang, Xiaoyu Saratoga, US 109 1244

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