Method for manufacturing a sensor device of a gaseous substance of interest
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United States of America Patent
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Apr 14, 2015
Grant Date -
Apr 26, 2012
app pub date -
Oct 21, 2011
filing date -
Oct 22, 2010
priority date (Note) -
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Abstract
A method manufactures a sensor device for sensing a gaseous substance and includes a thin film transistor, which includes a source electrode, a drain electrode and a gate electrode; and an element sensitive to the gaseous substance. In particular, the method includes: forming a first metallic layer on a substrate; defining and patterning the first metallic layer for realizing the gate electrode; depositing a dielectric layer above the gate electrode; depositing a second metallic layer above the layer of dielectric material, defining and patterning the second metallic layer for realizing the source electrode and the drain electrode, and forming the sensitive element by filling a channel region of the thin film transistor with an active layer sensitive to the gaseous substance.
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