Radiation hardened memory cell and design structures
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United States of America Patent
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Apr 14, 2015
Grant Date -
May 9, 2013
app pub date -
Nov 9, 2011
filing date -
Nov 9, 2011
priority date (Note) -
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Abstract
A radiation hardened static memory cell, methods of manufacture and design structures are provided. The method includes forming one or more first gate stacks and second gate stacks on a substrate. The method further includes providing a shallow implant process for the one or more first gate stacks such that diffusion regions of the one or more first gate stacks are non-butted junction regions. The method further includes providing a deep implant process for the one or more second gates stack such that diffusions regions of the one or more second gate stacks are butted junction regions.
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