ReRAM forming with reset and iload compensation
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United States of America Patent
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Apr 14, 2015
Grant Date -
Aug 28, 2014
app pub date -
Feb 28, 2013
filing date -
Feb 28, 2013
priority date (Note) -
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Abstract
FORMING reversible resistivity-switching elements is described herein. The FORMING voltage may be halted if the current through the memory cell reaches some reference current. The reference current may depend on how many groups of memory cells have been FORMED. This can help to increase the accuracy of determining when to halt the FORMING voltage. After the FORMING voltage is applied, a RESET voltage may be applied to those memory cells that have a resistance that is lower than a reference resistance to raise the resistance of those memory cells. By raising the resistance, the leakage current of these memory cells when other groups are programmed may be less. This, in turn, helps to prevent FORMING of the other groups from slowing down. A reason why this helps to prevent the slowdown is that the FORMING voltage may be kept near a desired level.
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