Non-volatile semiconductor memory device
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United States of America Patent
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Apr 14, 2015
Grant Date -
Sep 12, 2013
app pub date -
Sep 8, 2012
filing date -
Mar 12, 2012
priority date (Note) -
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Abstract
In one embodiment, a control circuit executes a first page writing operation, a first verify operations, a second page writing operation, a second verify operations, a step-up operation. The control circuit executes the first page writing operation which forms an intermediate distribution, and a first read operation which reads data form the intermediate distribution by using a determine voltage higher than a first verify voltage with a first value, and changes a second verify voltage based on the result of the first read operation.
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