Varied silicon richness silicon nitride formation

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United States of America Patent

PATENT NO 9012333
SERIAL NO

12556199

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A method, in one embodiment, can include forming a tunnel oxide layer on a substrate. In addition, the method can include depositing via atomic layer deposition a first layer of silicon nitride over the tunnel oxide layer. Note that the first layer of silicon nitride includes a first silicon richness. The method can also include depositing via atomic layer deposition a second layer of silicon nitride over the first layer of silicon nitride. The second layer of silicon nitride includes a second silicon richness that is different than the first silicon richness.

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Patent Owner(s)

  • CYPRESS SEMICONDUCTOR CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Fang, Shenqing Fremont, US 127 890
Ma, Yi Santa Clara, US 118 3493
Ogle, Robert San Jose, US 8 394

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