Process for increasing the hydrophilicity of silicon surfaces following HF treatment
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United States of America Patent
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Apr 28, 2015
Grant Date -
Jul 24, 2014
app pub date -
Jan 21, 2014
filing date -
Jan 22, 2013
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Abstract
A method for performing an oxide removal process is described. The method includes providing a substrate having an oxide layer, and preparing a patterned mask layer on the oxide layer, wherein the patterned mask layer has a pattern exposing at least a portion of the oxide layer. An HF treatment of the substrate is performed to transfer the pattern at least partially through the oxide layer, wherein the HF treatment exposes a silicon surface. Following the performing of the HF treatment, a surface property of the silicon surface is modified, wherein the modifying includes administering at least one oxidizing agent to contact the silicon surface to cause chemical oxidation of the silicon surface. And, following the modifying of the surface property, at least a portion of the patterned mask layer or a residual portion of the patterned mask layer is removed.
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